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Proceedings chapter
English

2.23 GHz gating InGaAs/InP single-photon avalanche diode for quantum key distribution

Published inAdvanced Photon Counting Techniques IV, Editors Itzler, M. A. & Campbell J. C.
Presented at Orlando (Florida), 5th April 2010
PublisherSPIE Press
Collection
  • SPIE Proceedings; 7681
Publication date2010
Abstract

We implement an InGaAs/InP single-photon avalanche diode (SPAD) for single-photon detection with the fastest gating frequency reported so far, of 2.23GHz, which approaches the limit given by the bandwidth of the SPAD - 2.5 GHz. We propose a useful way to characterize the afterpulsing distribution for rapid gating that allows for easy comparison with conventional gating regimes. We compare the performance of this rapid gating scheme with free-running detector and superconducting single-photon detector (SSPD) for the coherent one-way quantum key distribution (QKD) protocol. The rapid gating system is well suited for both high-rate and long-distance QKD applications, in which Mbps key rates can be achieved for distances less than 40km with 50 ns deadtime and the maximum distance is limited to ~190km with 5 μs deadtime. These results illustrate that the afterpulsing is no longer a limiting factor for QKD.

Keywords
  • Avalanche photodiodes
  • Indium gallium arsenide
  • Quantum key distribution
  • Single photon
  • Sensors
  • Superconductors
Citation (ISO format)
ZHANG, Jun et al. 2.23 GHz gating InGaAs/InP single-photon avalanche diode for quantum key distribution. In: Advanced Photon Counting Techniques IV. Orlando (Florida). [s.l.] : SPIE Press, 2010. (SPIE Proceedings) doi: 10.1117/12.862118
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