Scientific article

Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes

Published inApplied physics letters, vol. 95, no. 9, 091103
Publication date2009

We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes(SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of-30°C we achieve a detection efficiency of 9.3%, a dark count probability of 2.8×10−6 ns−1, while the afterpulse probability is 1.6×10−4 ns−1, with a 10 ns “count-off time” setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

  • Photodiodes
  • Avalanche photodiodes
  • Quantum cryptography
  • Infrared detectors
  • Photons
Citation (ISO format)
ZHANG, Jun et al. Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes. In: Applied physics letters, 2009, vol. 95, n° 9, p. 091103. doi: 10.1063/1.3223576
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Article (Published version)
ISSN of the journal0003-6951

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