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Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes

Published in Applied Physics Letters. 2009, vol. 95, no. 9, p. 091103
Abstract We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes(SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of-30°C we achieve a detection efficiency of 9.3%, a dark count probability of 2.8×10−6 ns−1, while the afterpulse probability is 1.6×10−4 ns−1, with a 10 ns “count-off time” setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.
Keywords PhotodiodesAvalanche photodiodesQuantum cryptographyInfrared detectorsPhotons
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ZHANG, Jun et al. Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes. In: Applied Physics Letters, 2009, vol. 95, n° 9, p. 091103. doi: 10.1063/1.3223576 https://archive-ouverte.unige.ch/unige:36624

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Deposited on : 2014-05-13

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