Article (Published version) (341 Kb) - 
Limited access to UNIGEOther version: http://scitation.aip.org/content/aip/journal/apl/95/9/10.1063/1.3223576
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Scientific Article
unige:36624 
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Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes |
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| Published in | Applied Physics Letters. 2009, vol. 95, no. 9, p. 091103 | |
| Abstract | We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes(SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of-30°C we achieve a detection efficiency of 9.3%, a dark count probability of 2.8×10−6 ns−1, while the afterpulse probability is 1.6×10−4 ns−1, with a 10 ns “count-off time” setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications. | |
| Keywords | Photodiodes — Avalanche photodiodes — Quantum cryptography — Infrared detectors — Photons | |
| Identifiers | DOI: 10.1063/1.3223576 | |
| Full text |
Article (Published version) (341 Kb) - Limited access to UNIGE Other version: http://scitation.aip.org/content/aip/journal/apl/95/9/10.1063/1.3223576 |
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| Structures | ||
| Citation (ISO format) | ZHANG, Jun et al. Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes. In: Applied Physics Letters, 2009, vol. 95, n° 9, p. 091103. doi: 10.1063/1.3223576 https://archive-ouverte.unige.ch/unige:36624 |
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