Quantitative analysis of density-dependent transport in tetramethyltetraselenafulvalene single-crystal transistors: Intrinsic properties and trapping
ContributorsXie, Hangxing; Alves, H.; Morpurgo, Alberto
Published inPhysical review. B, Condensed matter and materials physics, vol. 80, no. 24
Publication date2009
Abstract
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XIE, Hangxing, ALVES, H., MORPURGO, Alberto. Quantitative analysis of density-dependent transport in tetramethyltetraselenafulvalene single-crystal transistors: Intrinsic properties and trapping. In: Physical review. B, Condensed matter and materials physics, 2009, vol. 80, n° 24. doi: 10.1103/PhysRevB.80.245305
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Identifiers
- PID : unige:35120
- DOI : 10.1103/PhysRevB.80.245305
Journal ISSN1098-0121