Quantitative analysis of density-dependent transport in tetramethyltetraselenafulvalene single-crystal transistors: Intrinsic properties and trapping

Article Article scientifique Article Quantitative analysis of density-dependent transport in tetramethyltetraselenafulvalene single-crystal transistors: Intrinsic properties and trapping eng 2009 author Xie Hangxing 681774 author Alves H. author Morpurgo Alberto 666794 10.1103/PhysRevB.80.245305 1098-0121 We perform a combined experimental and theoretical study of tetramethyltetraselenafulvalene (TMTSF) single-crystal field-effect transistors, whose electrical characteristics exhibit clear signatures of the intrinsic transport properties of the material. We present a simple, well-defined model based on physical parameters and we successfully reproduce quantitatively the device properties as a function of temperature and carrier density. The analysis allows its internal consistency to be checked, and enables the reliable extraction of the density and characteristic energy of shallow and deep traps in the material. Our findings provide indications as to the origin of shallow traps in TMTSF transistors. Dewey 500.2 33 Département de physique de la matière quantique 131 35 Groupe de physique appliquée 135 false 678 Groupe Morpurgo Physical review. B, Condensed matter and materials physics 80 24 64b0b3e1-c393-4d2b-a434-93dcb8fd468a Article (Published version) Public Morpurgo27_0907.2219.pdf 240907 application/pdf openAccess Faculté des sciences / Section de physique / Département de physique de la matière quantique Faculté des sciences / Section de physique / Groupe de physique appliquée

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Quantitative analysis of density-dependent transport in tetramethyltetraselenafulvalene single-crystal transistors: Intrinsic properties and trapping	Physical review. B, Condensed matter and materials physics			2009	711	619

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