Scientific article
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Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition

Published inPhysical review letters, vol. 104, no. 23, 237401
Publication date2010
Research groups
Funding
  • Swiss National Science Foundation - 10.1103/PhysRevLett.104.237401
  • Swiss National Science Foundation - NCCR MaNEP
Citation (ISO format)
ARMITAGE, Peter et al. Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition. In: Physical review letters, 2010, vol. 104, n° 23, p. 237401. doi: 10.1103/PhysRevLett.104.237401
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Article (Published version)
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Identifiers
Journal ISSN0031-9007
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