Scientific article
Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition
Published inPhysical review letters, vol. 104, no. 23, 237401
Publication date2010
Affiliation entities
Research groups
Funding
- Swiss National Science Foundation - 10.1103/PhysRevLett.104.237401
- Swiss National Science Foundation - NCCR MaNEP
Citation (ISO format)
ARMITAGE, Peter et al. Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition. In: Physical review letters, 2010, vol. 104, n° 23, p. 237401. doi: 10.1103/PhysRevLett.104.237401
Main files (1)
Article (Published version)
Identifiers
- PID : unige:24144
- DOI : 10.1103/PhysRevLett.104.237401
Journal ISSN0031-9007
