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Title

Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition

Authors
Forro, L.
Published in Physical Review Letters. 2010, vol. 104, no. 23, p. 237401
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Structures
Projects FNS: 10.1103/PhysRevLett.104.237401
FNS: NCCR MaNEP
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(ISO format)
ARMITAGE, Peter et al. Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition. In: Physical Review Letters, 2010, vol. 104, n° 23, p. 237401. https://archive-ouverte.unige.ch/unige:24144

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Deposited on : 2012-11-21

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