Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition

Article Article scientifique Article Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition eng 2010 author Armitage Peter 625060 author Tediosi Riccardo 585383 author Levy Florence 671621 author Giannini Enrico 0000-0003-3536-4771 503364 author Forro L. author Van Der Marel Dirk 0000-0001-5266-9847 135104 237401 10.1103/PhysRevLett.104.237401 0031-9007 Dewey 500.2 Swiss National Science Foundation 10.1103/PhysRevLett.104.237401 CH Swiss National Science Foundation NCCR MaNEP CH 33 Département de physique de la matière quantique 131 false 785 Groupe Van der Marel Physical review letters 104 23 adba6312-f305-4206-9191-b0830aa6a0ea Article (Published version) Public bi-pressure-PRL2010.pdf 674913 application/pdf openAccess Faculté des sciences / Section de physique / Département de physique de la matière quantique

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Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition	Physical review letters			2010	625	529

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Armitage, Peter