Piezoelectric response of epitaxial Pb(Zr0.2Ti0.8)O3 films measured by scanning tunneling microscopy

Article Article scientifique Article Piezoelectric response of epitaxial Pb(Zr0.2Ti0.8)O3 films measured by scanning tunneling microscopy eng 2000 author Kuffer Olivier 113482 author Maggio-Aprile Ivan 26801 author Triscone Jean-Marc 21933 author Fischer Oystein 25258 author Renner Christoph 0000-0001-9882-681X 24186 1701 10.1063/1.1309017 0003-6951 http://scitation.aip.org/content/aip/journal/apl/77/11/10.1063/1.1309017 We report on scanning tunneling microscopymeasurements of the piezoelectric response in ferroelectricheterostructuresgrown by off-axis rf magnetronsputtering. The samples are composed of a single-crystalline ferroelectricfilm of Pb(Zr0.2Ti0.8)O3deposited on a conducting substrate and covered with an ultrathin metallic film of gold. The high quality of the c-axis oriented ferroelectric layer is evidenced by sharp polarization hysteresis loops. By applying a voltage to the bilayer and recording the inverse piezoelectric effect with the scanning tunneling microscope, we demonstrate the ability to measure the phase response as well as the ferroelectric switching. We obtained strain-field plots with a butterfly loop shape, and a quantitative measurement of the longitudinal piezoelectric coefficient (d33). Ferroelectric thin films Thin films Electric measurements Epitaxy Metallic thin films Dewey 500.2 33 Département de physique de la matière quantique 131 false 783 Groupe Renner 784 Groupe Triscone Applied physics letters 77 11 e4053259-a01c-4ff3-86e9-91a03e78a816 Article (Published version) Public Renner35.pdf 417469 application/pdf openAccess Faculté des sciences / Section de physique / Département de physique de la matière quantique

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Piezoelectric response of epitaxial Pb(Zr_0.2Ti_0.8)O₃ films measured by scanning tunneling microscopy	Applied physics letters			2000	783	575

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Kuffer, Olivier