UNIGE document Chapitre d'actes
previous document  unige:93839  next document
add to browser collection
Title

Positron Trapping at a Negatively Charged as Vacancy in GaAs

Authors
Published in Materials Science Forum. Beijing (China) - May 1994 - . 1995
Collection Materials Science Forum; 175-178
Keywords Defects in SemiconductorsExperimental and Theoretical 2D-ACAR SpectraFirst Principles Molecular Dynamics Simulation
Identifiers
ISBN: 978-0-87849-686-0
Full text
Structures
Citation
(ISO format)
GILGIEN, Lise et al. Positron Trapping at a Negatively Charged as Vacancy in GaAs. In: Positron Annihilation - ICPA-10. Beijing (China). [s.l.] : [s.n.], 1995. (Materials Science Forum; 175-178) doi: 10.4028/www.scientific.net/MSF.175-178.363 https://archive-ouverte.unige.ch/unige:93839

243 hits

0 download

Update

Deposited on : 2017-04-25

Export document
Format :
Citation style :