Positron Trapping at a Negatively Charged as Vacancy in GaAs
Published inPositron Annihilation - ICPA-10
Presented at Beijing (China), May 1994
Collection
- Materials Science Forum; 175-178
Publication date1995
Keywords
- Defects in Semiconductors
- Experimental and Theoretical 2D-ACAR Spectra
- First Principles Molecular Dynamics Simulation
Citation (ISO format)
GILGIEN, Lise et al. Positron Trapping at a Negatively Charged as Vacancy in GaAs. In: Positron Annihilation - ICPA-10. Beijing (China). [s.l.] : [s.n.], 1995. (Materials Science Forum) doi: 10.4028/www.scientific.net/MSF.175-178.363
Main files (1)
Proceedings chapter (Published version)
Identifiers
- PID : unige:93839
- DOI : 10.4028/www.scientific.net/MSF.175-178.363
Commercial URLhttp://www.scientific.net/MSF.175-178.363
ISBN978-0-87849-686-0
