Positron Trapping at a Negatively Charged as Vacancy in GaAs

Gilgien, Lise; Galli Gygi, Giulia; Gygi, François; Car, Roberto; Ambigapathy, Rajesh; Manuel, Alfred-Adrien

doi:10.4028/www.scientific.net/MSF.175-178.363

Proceedings chapter

English

Positron Trapping at a Negatively Charged as Vacancy in GaAs

ContributorsGilgien, Lise; Galli Gygi, Giulia; Gygi, François; Car, Roberto; Ambigapathy, Rajesh; Manuel, Alfred-Adrien

Presented atBeijing (China), May 1994

Published inPositron Annihilation - ICPA-10

Collection

Materials Science Forum; 175-178

Publication date1995

Keywords

Defects in Semiconductors
Experimental and Theoretical 2D-ACAR Spectra
First Principles Molecular Dynamics Simulation

Affiliation entities

Faculté des sciences / Section de physique / Département de physique de la matière quantique

Citation (ISO format)

GILGIEN, Lise et al. Positron Trapping at a Negatively Charged as Vacancy in GaAs. In: Positron Annihilation - ICPA-10. Beijing (China). [s.l.] : [s.n.], 1995. (Materials Science Forum) doi: 10.4028/www.scientific.net/MSF.175-178.363

Proceedings chapter (Published version)

Identifiers

PID : unige:93839
DOI : 10.4028/www.scientific.net/MSF.175-178.363

Additional URL for this publicationhttp://www.scientific.net/MSF.175-178.363

ISBN978-0-87849-686-0

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Positron Trapping at a Negatively Charged as Vacancy in GaAs

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