UNIGE document Scientific Article
previous document  unige:85953  next document
add to browser collection
Title

Crystal Growth with Oxygen Partial Pressure of the BaCuSi 2O6 and Ba1–xSrxCuSi2O6 Spin Dimer Compounds

Authors
van Well, Natalija
Puphal, Pascal
Kubus, Mariusz
Schefer, Jürg
Ritter, Franz
Krellner, Cornelius
show hidden authors show all authors [1 - 9]
Published in Crystal Growth & Design. 2016, vol. 16, no. 6, p. 3416-3424
Abstract BaCuSi2O6 is a quasi-two-dimensional spin dimer system and a model material for studying Bose–Einstein condensation (BEC) of magnons in high magnetic fields. The new Ba1–xSrxCuSi2O6 mixed system, which can be grown with x ≤ 0.3, and BaCuSi2O6, both grown by using a crystal growth method with enhanced oxygen partial pressure, have the same tetragonal structure (I41/acd) at room temperature. The mixed system shows no structural phase transition so that the tetragonal structure is stable down to low temperatures. The oxygen partial pressure acts as a control parameter for the growth process. A detailed understanding of the crystal structure depending on the oxygen content will enable the study of the spin dynamics of field-induced order states in this model magnetic compound of high current interest with only one type of dimer layers, which shows the same distance between the Cu atoms, in the structure.
Keywords Crystal growthBaCuSi2O6
Identifiers
Full text
Article (Published version) (623 Kb) - document accessible for UNIGE members only Limited access to UNIGE
Article (Author postprint) (2.1 MB) - public document Free access
Other version: http://pubs.acs.org/doi/abs/10.1021/acs.cgd.6b00399
Structures
Research group Groupe Ruegg
Citation
(ISO format)
VAN WELL, Natalija et al. Crystal Growth with Oxygen Partial Pressure of the BaCuSi 2O6 and Ba1–xSrxCuSi2O6 Spin Dimer Compounds. In: Crystal Growth & Design, 2016, vol. 16, n° 6, p. 3416-3424. https://archive-ouverte.unige.ch/unige:85953

111 hits

25 downloads

Update

Deposited on : 2016-08-15

Export document
Format :
Citation style :