Scientific article
Open access

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

Published inApplied physics letters, vol. 106, no. 5, 051604
Publication date2015

We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility ( ≈10 000 cm2 V−1 s−1 ) and the lowest sheet carrier density ( ≈5×1012 cm−2 ). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800–900 °C) display carrier densities in the range of ≈2−5×1013 cm−2 and mobilities of ≈1000 cm2 V−1 s−1 at 4 K. Reducing their carrier density by field effect to 8×1012 cm−2 lowers their mobilities to ≈50 cm2 V−1 s−1 bringing the conductance to the weak-localization regime.

Citation (ISO format)
FETE, Alexandre et al. Growth-induced electron mobility enhancement at the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> interface. In: Applied physics letters, 2015, vol. 106, n° 5, p. 051604. doi: 10.1063/1.4907676
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Article (Published version)
ISSN of the journal0003-6951

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