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Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

Caviglia, A. D.
Published in Applied Physics Letters. 2015, vol. 106, no. 5, p. 051604
Abstract We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility ( ≈10 000 cm2 V−1 s−1 ) and the lowest sheet carrier density ( ≈5×1012 cm−2 ). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800–900 °C) display carrier densities in the range of ≈2−5×1013 cm−2 and mobilities of ≈1000 cm2 V−1 s−1 at 4 K. Reducing their carrier density by field effect to 8×1012 cm−2 lowers their mobilities to ≈50 cm2 V−1 s−1 bringing the conductance to the weak-localization regime.
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Research group Groupe Triscone
Projects FNS: No. 200020-152800
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FETE, Alexandre et al. Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface. In: Applied Physics Letters, 2015, vol. 106, n° 5, p. 051604. https://archive-ouverte.unige.ch/unige:47230

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Deposited on : 2015-02-24

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