Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon

Sambri, Alessia; Gariglio, Stefano; Torres Pardo, A.; Triscone, Jean-Marc; Stéphan, O.; Reiner, J. W.; Ahn, C. H.

doi:10.1063/1.3532110

Scientific article

Open access

English

Enhanced critical temperature in epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O₃ thin films on silicon

ContributorsSambri, Alessia; Gariglio, Stefano

; Torres Pardo, A.; Triscone, Jean-Marc; Stéphan, O.; Reiner, J. W.; Ahn, C. H.

Published inApplied physics letters, vol. 98, no. 1, 012903

Publication date2011

Abstract

The structural and electrical properties of epitaxialPb(Zr0.2Ti0.8)O3thin filmsgrown on 2 in. (001) silicon wafers were investigated. Using x-ray diffraction, the lattice behavior of the heterostructure has been studied as a function of temperature, suggesting a 250 °C increase of the Pb(Zr0.2Ti0.8)O3 ferroelectric-paraelectric transition temperature with respect to the bulk value. This significant enhancement of the critical temperature is understood in terms of a two-dimensional clamping effect.

Affiliation

Faculté des sciences / Section de physique / Département de physique de la matière quantique

Research group

Groupe Triscone

Citation (ISO format)

SAMBRI, Alessia et al. Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon. In: Applied physics letters, 2011, vol. 98, n° 1, p. 012903. doi: 10.1063/1.3532110

Article (Published version)

Identifiers

PID : unige:46979
DOI : 10.1063/1.3532110

Commercial URLhttp://scitation.aip.org/content/aip/journal/apl/98/1/10.1063/1.3532110

ISSN of the journal0003-6951

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Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon

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Enhanced critical temperature in epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O₃ thin films on silicon