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Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon

ContributorsSambri, Alessia; Gariglio, Stefanoorcid; Torres Pardo, A.; Triscone, Jean-Marc; Stéphan, O.; Reiner, J. W.; Ahn, C. H.
Published inApplied physics letters, vol. 98, no. 1, 012903
Publication date2011
Abstract

The structural and electrical properties of epitaxialPb(Zr0.2Ti0.8)O3thin filmsgrown on 2 in. (001) silicon wafers were investigated. Using x-ray diffraction, the lattice behavior of the heterostructure has been studied as a function of temperature, suggesting a 250 °C increase of the Pb(Zr0.2Ti0.8)O3 ferroelectric-paraelectric transition temperature with respect to the bulk value. This significant enhancement of the critical temperature is understood in terms of a two-dimensional clamping effect.

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SAMBRI, Alessia et al. Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon. In: Applied physics letters, 2011, vol. 98, n° 1, p. 012903. doi: 10.1063/1.3532110
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Additional URL for this publicationhttp://scitation.aip.org/content/aip/journal/apl/98/1/10.1063/1.3532110
Journal ISSN0003-6951
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