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Title

Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon

Authors
Torres Pardo, A.
Stéphan, O.
Reiner, J. W.
Ahn, C. H.
Published in Applied Physics Letters. 2011, vol. 98, no. 1, p. 012903
Abstract The structural and electrical properties of epitaxialPb(Zr0.2Ti0.8)O3thin filmsgrown on 2 in. (001) silicon wafers were investigated. Using x-ray diffraction, the lattice behavior of the heterostructure has been studied as a function of temperature, suggesting a 250 °C increase of the Pb(Zr0.2Ti0.8)O3 ferroelectric-paraelectric transition temperature with respect to the bulk value. This significant enhancement of the critical temperature is understood in terms of a two-dimensional clamping effect.
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Research group Groupe Triscone
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SAMBRI, Alessia et al. Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon. In: Applied Physics Letters, 2011, vol. 98, n° 1, p. 012903. https://archive-ouverte.unige.ch/unige:46979

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Deposited on : 2015-02-23

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