Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon
Published inApplied physics letters, vol. 98, no. 1, 012903
Publication date2011
Abstract
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Citation (ISO format)
SAMBRI, Alessia et al. Enhanced critical temperature in epitaxial ferroelectric Pb(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub> thin films on silicon. In: Applied physics letters, 2011, vol. 98, n° 1, p. 012903. doi: 10.1063/1.3532110
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Identifiers
- PID : unige:46979
- DOI : 10.1063/1.3532110
ISSN of the journal0003-6951