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Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon

Published inApplied physics letters, vol. 98, no. 1, 012903
Publication date2011
Abstract

The structural and electrical properties of epitaxialPb(Zr0.2Ti0.8)O3thin filmsgrown on 2 in. (001) silicon wafers were investigated. Using x-ray diffraction, the lattice behavior of the heterostructure has been studied as a function of temperature, suggesting a 250 °C increase of the Pb(Zr0.2Ti0.8)O3 ferroelectric-paraelectric transition temperature with respect to the bulk value. This significant enhancement of the critical temperature is understood in terms of a two-dimensional clamping effect.

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Citation (ISO format)
SAMBRI, Alessia et al. Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon. In: Applied physics letters, 2011, vol. 98, n° 1, p. 012903. doi: 10.1063/1.3532110
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Journal ISSN0003-6951
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