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Dynamic Conductance in Quantum Hall Systems

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Published in G. Landwehr and W. Ossau. 12th International Conference: The application of high magnetic fields in semiconductor physics. Wuerzburg - 28 July - 2 August 1996 - Singapore: World Scientific Publ. 1996, p. 193
Abstract In the framework of the edge-channel picture and the scattering approach to conduction, we discuss the low frequency admittance of quantized Hall samples up to second order in frequency. The first-order term gives the leading order phase-shift between current and voltage and is associated with the displacement current. It is determined by the emittance which is a capacitance in a capacitive arrangement of edge channels but which is inductive-like if edge channels predominate which transmit charge between different reservoirs. The second-order term is associated with the charge relaxation. We apply our results to a Corbino disc and to two- and four-terminal quantum Hall bars, and we discuss the symmetry properties of the current response. In particular, we calculate the longitudinal resistance and the Hall resistance as a function of frequency.
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ISBN: 978-981-02-3076-0
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BUTTIKER, Markus, CHRISTEN, Thomas. Dynamic Conductance in Quantum Hall Systems. In: G. Landwehr and W. Ossau (Ed.). 12th International Conference: The application of high magnetic fields in semiconductor physics. Wuerzburg. Singapore : World Scientific Publ, 1996. p. 193. https://archive-ouverte.unige.ch/unige:4488

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