UNIGE document Chapitre d'actes
previous document  unige:4485  next document
add to browser collection
Title

Shot-Noise-Induced Charge and Potential Fluctuations of Edge States in Proximity of a Gate

Author
Published in 26th Sitges Conference : Statistical and Dynamical Aspects of Mesoscopic Systems. Berlin: Springer. 2000, p. 81-95
Collection Lecture Notes in Physics; 547
Abstract We evaluate the RC-time of edge states capacitively coupled to a gate located away from a QPC which allows for partial transmission of an edge channel. At long times or low frequencies the RC-time governs the relaxation of charge and current and governs the fluctuations of the equilibrium electrostatic potential. The RC-time in mesoscopic structures is determined by an electrochemical capacitance which depends on the density of states of the edge states and a charge relaxation resistance. In the non-equilibrium case, in the presence of transport, the shot noise leads to charge fluctuations in proximity of the gate which are again determined by the equilibrium electrochemical capacitance but with a novel resistance. The case of multiple edge states is discussed and the effect of a dephasing voltage probe on these resistances is investigated. The potential fluctuations characterized by these capacitances and resistances are of interest since they determine the dephasing rate in Coulomb coupled mesoscopic conductors.
Identifiers
ISBN: 978-3-540-67478-8
Full text
Proceedings chapter - public document Free access
Structures
Citation
(ISO format)
BUTTIKER, Markus. Shot-Noise-Induced Charge and Potential Fluctuations of Edge States in Proximity of a Gate. In: 26th Sitges Conference : Statistical and Dynamical Aspects of Mesoscopic Systems. Berlin : Springer, 2000. p. 81-95. (Lecture Notes in Physics; 547) https://archive-ouverte.unige.ch/unige:4485

144 hits

101 downloads

Update

Deposited on : 2009-12-01

Export document
Format :
Citation style :