Transport evidence for pressure-induced superconductivity in CePd<sub>2</sub>Si<sub>2</sub>

Raymond, Stéphane; Jaccard, Didier; Wilhelm, Heribert; Cerny, Radovan

doi:10.1016/S0038-1098(99)00412-3

Scientific article

English

Transport evidence for pressure-induced superconductivity in CePd₂Si₂

ContributorsRaymond, Stéphane; Jaccard, Didier; Wilhelm, Heribert; Cerny, Radovan

Published inSolid state communications, vol. 112, no. 11, p. 617-620

Publication date1999

Abstract

Resistivity measurements performed under pressure on high quality single crystals of CePd2Si2 are reported. Pressure-induced superconductivity is observed in the range 2–7 GPa with an optimal Tc of 520 mK at 5.1 GPa. The superconducting properties of the sample as well as its peculiar zero pressure resistivity are tentatively linked to its preparation.

Keywords

Superconductors
Electronic transport
Heavy fermions
Srain, high pressure

Affiliation entities

Faculté des sciences / Section de physique / Département de physique de la matière quantique

Research groups

Groupe Cerny

Citation (ISO format)

RAYMOND, Stéphane et al. Transport evidence for pressure-induced superconductivity in CePd₂Si₂. In: Solid state communications, 1999, vol. 112, n° 11, p. 617–620. doi: 10.1016/S0038-1098(99)00412-3

Article (Published version)

Identifiers

PID : unige:44570
DOI : 10.1016/S0038-1098(99)00412-3

Additional URL for this publicationhttp://linkinghub.elsevier.com/retrieve/pii/S0038109899004123

Journal ISSN0038-1098

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Transport evidence for pressure-induced superconductivity in CePd2Si2

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Transport evidence for pressure-induced superconductivity in CePd₂Si₂