Dielectric pads and low- B1+ adiabatic pulses: complementary techniques to optimize structural T1 w whole-brain MP2RAGE scans at 7 tesla

O'Brien, Kieran; Magill, Arthur W; Delacoste, Jean; Marques, Jose P; Kober, Tobias; Fautz, Hans-Peter; Lazeyras, François; Krueger, Gunnar

doi:10.1002/jmri.24435

Scientific article

English

Dielectric pads and low- B1+ adiabatic pulses: complementary techniques to optimize structural T1 w whole-brain MP2RAGE scans at 7 tesla

ContributorsO'Brien, Kieran; Magill, Arthur W; Delacoste, Jean; Marques, Jose P; Kober, Tobias; Fautz, Hans-Peter; Lazeyras, François; Krueger, Gunnar

Published inJournal of magnetic resonance, vol. 40, no. 4, p. 804-812

Publication date2014

Abstract

To evaluate the combination of low-B1 (+) adiabatic pulses and high permittivity (εr ≈ 165) dielectric pads effectiveness to reproducibly improve the inversion efficiency for whole-brain MP2RAGE scans, at ultra-high field.

Affiliation entities

Faculté de médecine / Section de médecine clinique / Département de radiologie et informatique médicale

Research groups

Groupe Lazeyras Francois (IRM fonctionnelle et métabolique) (539)

Citation (ISO format)

O’BRIEN, Kieran et al. Dielectric pads and low- B1+ adiabatic pulses: complementary techniques to optimize structural T1 w whole-brain MP2RAGE scans at 7 tesla. In: Journal of magnetic resonance, 2014, vol. 40, n° 4, p. 804–812. doi: 10.1002/jmri.24435

Article (Published version)

Identifiers

PID : unige:43047
DOI : 10.1002/jmri.24435
PMID : 24446194

Journal ISSN1090-7807

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Creation10/12/2014 18:11:00

First validation10/12/2014 18:11:00

Update14/03/2023 22:24:36

Status update14/03/2023 22:24:36

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Dielectric pads and low- B1+ adiabatic pulses: complementary techniques to optimize structural T1 w whole-brain MP2RAGE scans at 7 tesla

To evaluate the combination of low-B1 (+) adiabatic pulses and high permittivity (εr ≈ 165) dielectric pads effectiveness to reproducibly improve the inversion efficiency for whole-brain MP2RAGE scans, at ultra-high field.

Technical informations