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Scientific Article
unige:42082 
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Electronic Structure of a Quasi-Freestanding MoS2 Monolayer |
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| Published in | Nano Letters. 2014, vol. 14, no. 3, p. 1312-1316 | |
| Abstract | Several transition-metal dichalcogenides exhibit a striking crossover from indirect to direct band gap semiconductors as they are thinned down to a single monolayer. Here, we demonstrate how an electronic structure characteristic of the isolated monolayer can be created at the surface of a bulk MoS2 crystal. This is achieved by intercalating potassium in the interlayer van der Waals gap, expanding its size while simultaneously doping electrons into the conduction band. Our angle-resolved photoemission measurements reveal resulting electron pockets centered at the K̅ and K′ points of the Brillouin zone, providing the first momentum-resolved measurements of how the conduction band dispersions evolve to yield an approximately direct band gap of ∼1.8 eV in quasi-freestanding monolayer MoS2. As well as validating previous theoretical proposals, this establishes a novel methodology for manipulating electronic structure in transition-metal dichalcogenides, opening a new route for the generation of large-area quasi-freestanding monolayers for future fundamental study and use in practical applications. | |
| Keywords | Molybdenum disulfide (MoS2) — Transition metal dichalcogenides (TMD) — Layered semiconductor — Electronic structure — Angle-resolved photoemission — Van der Waals expansion | |
| Identifiers | DOI: 10.1021/nl4042824 | |
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| Citation (ISO format) | EKNAPAKUL, T. et al. Electronic Structure of a Quasi-Freestanding MoS2 Monolayer. In: Nano Letters, 2014, vol. 14, n° 3, p. 1312-1316. https://archive-ouverte.unige.ch/unige:42082 |
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