Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects

Scanlon, D. O.; King, P. D. C.; Singh, R. P.; De La Torre, Alberto; Mckeown Walker, Siobhan; Balakrishnan, G.; Baumberger, Felix; Catlow, C. R. A.

doi:10.1002/adma.201200187

Scientific article

English

Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects

ContributorsScanlon, D. O.; King, P. D. C.; Singh, R. P.; De La Torre, Alberto; Mckeown Walker, Siobhan; Balakrishnan, G.; Baumberger, Felix

; Catlow, C. R. A.

Published inAdvanced materials, vol. 24, no. 16, p. 2154-2158

Publication date2012

Abstract

Intrinsic topological insulators are realized by alloying Bi2Te3 with Bi2Se3. Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.

Keywords

Topological insulators
Bulk conductivity
Defects
Density-functional theory
ARPES

Affiliation entities

Faculté des sciences / Section de physique / Département de physique de la matière quantique

Research groups

Groupe Baumberger

Citation (ISO format)

SCANLON, D. O. et al. Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects. In: Advanced materials, 2012, vol. 24, n° 16, p. 2154–2158. doi: 10.1002/adma.201200187

Article (Published version)

Identifiers

PID : unige:42076
DOI : 10.1002/adma.201200187

Journal ISSN0935-9648

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Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects

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