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Title

Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects

Authors
Scanlon, D. O.
King, P. D. C.
Singh, R. P.
Balakrishnan, G.
Catlow, C. R. A.
Published in Advanced Materials. 2012, vol. 24, no. 16, p. 2154-2158
Abstract Intrinsic topological insulators are realized by alloying Bi2Te3 with Bi2Se3. Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.
Keywords Topological insulatorsBulk conductivityDefectsDensity-functional theoryARPES
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Other version: http://doi.wiley.com/10.1002/adma.201200187
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SCANLON, D. O. et al. Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects. In: Advanced Materials, 2012, vol. 24, n° 16, p. 2154-2158. https://archive-ouverte.unige.ch/unige:42076

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Deposited on : 2014-11-21

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