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Development of n-on-p silicon sensors for very high radiation environments

Unno, Y.
CollaborationWith : Clark, Allan Geoffrey / Ferrere, Didier / Gonzalez Sevilla, Sergio
Published in Nuclear Instruments and Methods in Physics Research. A. 2011, vol. 636, no. 1, p. S24-S30
Abstract We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 1×1015 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm×9.75 cm large-area sensor and several 1 cm×1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. The first fabrication batch allowed us to identify the weak spots in the PTP and the stereo strip layouts. By understanding the source of the weakness, the mask was modified accordingly. After modification, the follow-up fabrication batches and the latest fabrication of about 30 main sensors and associated miniature sensors have shown good performance, with no sign of microdischarge up to 1000 V.
Keywords SiliconSensorMicrostripP-typeN-in-pATLASSLHCRadiation damage
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UNNO, Y. Development of n-on-p silicon sensors for very high radiation environments. In: Nuclear Instruments and Methods in Physics Research. A, 2011, vol. 636, n° 1, p. S24-S30. https://archive-ouverte.unige.ch/unige:38771

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Deposited on : 2014-07-21

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