Development of n-on-p silicon sensors for very high radiation environments
ContributorsUnno, Y.
CollaboratorsClark, Allan Geoffrey; Ferrere, Didier; Gonzalez Sevilla, Sergio
Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, vol. 636, no. 1, p. S24-S30
Publication date2011
Abstract
Keywords
- Silicon
- Sensor
- Microstrip
- P-type
- N-in-p
- ATLAS
- SLHC
- Radiation damage
Affiliation entities
Citation (ISO format)
UNNO, Y. Development of n-on-p silicon sensors for very high radiation environments. In: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2011, vol. 636, n° 1, p. S24–S30. doi: 10.1016/j.nima.2010.04.080
Main files (1)
Article (Published version)
Identifiers
- PID : unige:38771
- DOI : 10.1016/j.nima.2010.04.080
Additional URL for this publicationhttp://linkinghub.elsevier.com/retrieve/pii/S0168900210009344
Journal ISSN0168-9002