Scientific article

Development of n-on-p silicon sensors for very high radiation environments

ContributorsUnno, Y.
Publication date2011

We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 1×1015 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm×9.75 cm large-area sensor and several 1 cm×1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. The first fabrication batch allowed us to identify the weak spots in the PTP and the stereo strip layouts. By understanding the source of the weakness, the mask was modified accordingly. After modification, the follow-up fabrication batches and the latest fabrication of about 30 main sensors and associated miniature sensors have shown good performance, with no sign of microdischarge up to 1000 V.

  • Silicon
  • Sensor
  • Microstrip
  • P-type
  • N-in-p
  • SLHC
  • Radiation damage
Citation (ISO format)
UNNO, Y. Development of n-on-p silicon sensors for very high radiation environments. In: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2011, vol. 636, n° 1, p. S24–S30. doi: 10.1016/j.nima.2010.04.080
Main files (1)
Article (Published version)
ISSN of the journal0168-9002

Technical informations

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