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Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments

Authors
Hara, K.
Affolder, A.A.
Allport, P.P.
Bates, R.
Betancourt, C.
Bohm, J.
Brown, H.
Buttar, C.
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Published in Nuclear Instruments and Methods in Physics Research. A. 2011, vol. 636, no. 1, p. S83-S89
Abstract We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb−1, which is twice the sLHC integrated luminosity goal.
Keywords P-Bulk siliconMicrostripCharge collectionRadiation damage
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HARA, K. et al. Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments. In: Nuclear Instruments and Methods in Physics Research. A, 2011, vol. 636, n° 1, p. S83-S89. https://archive-ouverte.unige.ch/unige:38769

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Deposited on : 2014-07-21

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