Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
ContributorsHara, K.
CollaboratorsClark, Allan Geoffrey; Ferrere, Didier; Gonzalez Sevilla, Sergio
Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, vol. 636, no. 1, p. S83-S89
Publication date2011
Abstract
Keywords
- P-Bulk silicon
- Microstrip
- Charge collection
- Radiation damage
Affiliation entities
Citation (ISO format)
HARA, K. Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments. In: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2011, vol. 636, n° 1, p. S83–S89. doi: 10.1016/j.nima.2010.04.090
Main files (1)
Article (Published version)
Identifiers
- PID : unige:38769
- DOI : 10.1016/j.nima.2010.04.090
Additional URL for this publicationhttp://linkinghub.elsevier.com/retrieve/pii/S0168900210009447
Journal ISSN0168-9002
