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Title

Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

Authors
Lindgren, S.
Affolder, A.A.
Allport, P.P.
Bates, R.
Betancourt, C.
Bohm, J.
Brown, H.
Buttar, C.
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Published in Nuclear Instruments and Methods in Physics Research. A. 2011, vol. 636, no. 1, p. S111-S117
Abstract We are developing n+-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip ∼1 kΩ, after the integrated luminosity of 6 ab−1, which is twice the luminosity goal.
Keywords P-Bulk siliconSurface damageCharge collectionPunch-through voltage
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LINDGREN, S. et al. Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment. In: Nuclear Instruments and Methods in Physics Research. A, 2011, vol. 636, n° 1, p. S111-S117. https://archive-ouverte.unige.ch/unige:38767

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Deposited on : 2014-07-21

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