Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment
ContributorsLindgren, S.
CollaboratorsClark, Allan Geoffrey; Ferrere, Didier; Gonzalez Sevilla, Sergio
Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, vol. 636, no. 1, p. S111-S117
Publication date2011
Abstract
Keywords
- P-Bulk silicon
- Surface damage
- Charge collection
- Punch-through voltage
Affiliation entities
Citation (ISO format)
LINDGREN, S. Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment. In: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2011, vol. 636, n° 1, p. S111–S117. doi: 10.1016/j.nima.2010.04.094
Main files (1)
Article (Published version)
Identifiers
- PID : unige:38767
- DOI : 10.1016/j.nima.2010.04.094
Additional URL for this publicationhttp://linkinghub.elsevier.com/retrieve/pii/S0168900210009484
Journal ISSN0168-9002