Scientific article

Mechanism of Enhancement in Electromagnetic Properties of MgB2 by Nano SiC Doping

Published inPhysical review letters, vol. 98, no. 9
Publication date2007

A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.

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Citation (ISO format)
DOU, S. X. et al. Mechanism of Enhancement in Electromagnetic Properties of MgB<sub>2</sub> by Nano SiC Doping. In: Physical review letters, 2007, vol. 98, n° 9. doi: 10.1103/PhysRevLett.98.097002
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Article (Published version)
ISSN of the journal0031-9007

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