Mechanism of Enhancement in Electromagnetic Properties of MgB<sub>2</sub> by Nano SiC Doping

Dou, S. X.; Shcherbakova, O.; Yeoh, W. K.; Kim, J. H.; Soltanian, S.; Wang, X. L.; Senatore, Carmine; Flukiger, René-Louis; Dhalle, Marc; Husnjak, O.; Babic, E.

doi:10.1103/PhysRevLett.98.097002

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Title		Mechanism of Enhancement in Electromagnetic Properties of MgB₂ by Nano SiC Doping
Authors		Dou, S. X. Shcherbakova, O. Yeoh, W. K. Kim, J. H. Soltanian, S. Wang, X. L. Senatore, Carmine Flukiger, René-Louis Dhalle, Marc Husnjak, O. Babic, E. show all authors [1 - 11]
Published in		Physical Review Letters. 2007, vol. 98, no. 9
Abstract		A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.
Identifiers		DOI: 10.1103/PhysRevLett.98.097002
Full text		Article (Published version) (268 Kb) - Limited access to UNIGE
Structures		Faculté des sciences / Section de physique / Groupe de physique appliquée Faculté des sciences / Section de physique / Département de physique de la matière quantique
Research group		Groupe Senatore
Citation (ISO format)		DOU, S. X. et al. Mechanism of Enhancement in Electromagnetic Properties of MgB₂ by Nano SiC Doping. In: Physical Review Letters, 2007, vol. 98, n° 9. doi: 10.1103/PhysRevLett.98.097002 https://archive-ouverte.unige.ch/unige:36291