Electronic structure of Bi lines on clean and H-passivated Si(100)
ContributorsJavorský, Jakub; Owen, James; Setvín, Martin; Miki, Kazushi
Published inJournal of physics. Condensed matter, vol. 22, no. 17, 175006
Publication date2010
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JAVORSKÝ, Jakub et al. Electronic structure of Bi lines on clean and H-passivated Si(100). In: Journal of physics. Condensed matter, 2010, vol. 22, n° 17, p. 175006. doi: 10.1088/0953-8984/22/17/175006
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- PID : unige:35922
- DOI : 10.1088/0953-8984/22/17/175006
Additional URL for this publicationhttp://stacks.iop.org/0953-8984/22/i=17/a=175006?key=crossref.84a2e7ffaa20010eb50ccbd7f3b1bd20
Journal ISSN0953-8984
