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Electronic structure of Bi lines on clean and H-passivated Si(100)

Javorský, Jakub
Setvín, Martin
Miki, Kazushi
Published in Journal of Physics. Condensed Matter. 2010, vol. 22, no. 17, p. 175006
Abstract By means of scanning tunnelling microscopy and spectroscopy, we have investigated the electronic structure of Bi nanolines on clean and H-passivated Si(100) surfaces. Maps of the local density of states (LDOS) images of the Bi nanolines are presented for the first time. The spectra obtained for nanolines on a clean Si surface and the LDOS images agree with ab initio predicted spectra for the Haiku structure. For nanolines on a H-passivated surface, the spectra obtained suggest that the Bi nanoline may locally pin the surface Fermi level, and the LDOS images taken at low bias show a distribution of states different to what was expected at the Bi nanolines. The results are discussed with respect to use of the nanolines as atomic wire interconnections.
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JAVORSKÝ, Jakub et al. Electronic structure of Bi lines on clean and H-passivated Si(100). In: Journal of Physics. Condensed Matter, 2010, vol. 22, n° 17, p. 175006. https://archive-ouverte.unige.ch/unige:35922

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Deposited on : 2014-04-22

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