UNIGE document Scientific Article
previous document  unige:35766  next document
add to browser collection
Title

Half-filled orbital and unconventional geometry of a common dopant in Si(001)

Authors
Iwaya, K.
Bowler, D. R.
Brázdová, V.
Ferreira da Silva, A.
Wu, W.
Fisher, A. J.
Stoneham, A. M.
show hidden authors show all authors [1 - 9]
Published in Physical Review. B, Condensed Matter. 2013, vol. 88, no. 3
Abstract The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic properties of dopants at surfaces and interfaces, steadily growing in importance as microelectronic devices shrink, are also solely governed by their column of origin. The common light impurity P replaces individual Si atoms and maintains the integrity of the dimer superstructure of the Si(001) surface, but loses its valence electrons to surface states. Here we report that isolated heavy dopants are entirely different: Bi atoms form pairs with Si vacancies, retain their electrons, and have highly localized, half-filled orbitals.
Identifiers
Full text
Structures
Citation
(ISO format)
IWAYA, K. et al. Half-filled orbital and unconventional geometry of a common dopant in Si(001). In: Physical Review. B, Condensed Matter, 2013, vol. 88, n° 3. https://archive-ouverte.unige.ch/unige:35766

143 hits

71 downloads

Update

Deposited on : 2014-04-15

Export document
Format :
Citation style :