Scientific article

Anisotropy, disorder, and superconductivity in CeCu2Si2 under high pressure

Published inJournal of physics. Condensed matter, vol. 17, no. 35, p. 5423-5432
Publication date2005

Resistivity measurements were carried out up to 8 GPa on single-crystal and polycrystalline samples of CeCu2Si2 from differing sources in the homogeneity range. The anisotropic response to current direction and small uniaxial stresses was explored, taking advantage of the quasi-hydrostatic environment of the Bridgman anvil cell. It was found that both the superconducting transition temperature Tc and the normal state properties are very sensitive to uniaxial stress, which leads to a shift of the valence instability pressure Pv and a small but significant change in Tc for different orientations with respect to the tetragonal c-axis. The coexistence of superconductivity and residual resistivity close to the Ioffe–Regel limit around 5 GPa provides a compelling argument for the existence of a valence fluctuation mediated pairing interaction at high pressure in CeCu2Si2.

  • Superconductivity
  • Condensed matter:structural, mechanical and thermal
Citation (ISO format)
HOLMES, Alexander et al. Anisotropy, disorder, and superconductivity in CeCu<sub>2</sub>Si<sub>2</sub> under high pressure. In: Journal of physics. Condensed matter, 2005, vol. 17, n° 35, p. 5423–5432. doi: 10.1088/0953-8984/17/35/009
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Article (Published version)
ISSN of the journal0953-8984

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