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Scientific article
English

Rietveld refinement for indium nitride in the 105–295 K range

Contributors

Paszkowicz, W.; Cerny, Radovan; Krukowski, S.

Published in

Powder diffraction, vol. 18, no. 02, p. 114-121

Publication date

2003

Abstract

Results of Rietveld refinement for indium nitride data collected in the temperature range 105–295 K are presented. Acicular microcrystals of indium nitride prepared by reaction of liquid indium with nitrogen plasma were studied by X-ray diffraction. The diffraction measurements were carried out at the Swiss-Norwegian Beamline SNBL (ESRF) using a MAR345 image-plate detector. Excellent counting statistics allowed for refinement of the lattice parameters of InN as well as those of the metallic indium secondary phase. In the studied temperature range, the InN lattice parameters show a smooth increase that can be approximated by a linear function. Lattice-parameter dependencies confirm the trends indicated earlier by data measured using a conventional equipment. The relative change of both the a and c lattice parameters with increasing the temperature in the studied range is about 0.05%. The axial ratio slightly decreases with rising temperature. The experimental value of the free structural parameter, u=0.3769(14), is reported for InN for the first time. Its temperature variation is found to be considerably smaller than the experimental error. The thermal-expansion coefficients (TECs), derived from the linearly approximated lattice-parameter dependencies, are aa=3.09(14)x10-6 K-1 and ac=2.79(16)x10-6 K-1. The evaluated TECs are generally consistent with the earlier data. For the present dataset, the accuracy is apparently higher for both, the lattice parameters and thermal-expansion coefficients, than for the earlier results. The refined lattice parameter cIn of the indium secondary phase exhibits the known strongly nonlinear behavior; a shift (∆T equal about -50 K) of the maximum in cIn(T) dependence is observed with respect to the literature data..

Keywords

  • Thermal expansion
  • Inorganic compound
  • Nitride
  • III-V semiconductor
  • Indium

UNIGE affiliation entities

UNIGE research groups

Citation (ISO format)

PASZKOWICZ, W., CERNY, Radovan, KRUKOWSKI, S. Rietveld refinement for indium nitride in the 105–295 K range. In: Powder diffraction, 2003, vol. 18, n° 02, p. 114–121. doi: 10.1154/1.1566957

Main files (1)

Article (Published version)

Identifiers

Additional URL for this publication

http://journals.cambridge.org/abstract_S0885715600007624

Journal ISSN

0885-7156
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Technical informations

Creation

14/04/2014 10:27:00

First validation

14/04/2014 10:27:00

Update

14/03/2023 21:07:25

Status update

14/03/2023 21:07:25

Last indexation

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