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Scientific article
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Theoretical aspects of simple and nested Fermi surfaces for superconductivity in doped semiconductors and high-TC cuprates

Published inSolid state communications, vol. 181, p. 15-19
Publication date2014
Abstract

The density-of-states at the Fermi energy, $N(E_F)$, is low in doped superconducting semiconductors and high-$T_C$ cuprates. This contrasts with the common view that superconductivity requires a large electron-boson coupling $lambda$ and therefore also a large $N(E_F)$. However, the generic Fermi surfaces (FS) of these systems are relatively simple. Here is presented arguments showing that going from a 3-dimensional multi-band FS to a 2-dimensional and simple FS is energetically favorable to superconductivity. Nesting and few excitations of bosons compensate for a low $N(E_F)$. The typical behavior of the 2-dimensional FS for cuprates, and small 3-dimensional FS pockets in doped semiconductors and diamond, leads to $T_C$ variations as a function of doping in line with what has been observed. Diamond is predicted to attain higher $T_C$ from electron doping than from hole doping, while conditions for superconductivity in Si and Ge are less favorable. A high-$T_C$ material should ideally have few flat and parallel FS sheets with a reasonably large $N(E_F)$.

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Citation (ISO format)
JARLBORG, Thomas N. Theoretical aspects of simple and nested Fermi surfaces for superconductivity in doped semiconductors and high-T<sub>C</sub> cuprates. In: Solid state communications, 2014, vol. 181, p. 15–19. doi: 10.1016/j.ssc.2013.11.030
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ISSN of the journal0038-1098
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