UNIGE document Scientific Article
previous document  unige:35117  next document
add to browser collection
Title

High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors

Authors
Molinari, Anna S.
Alves, Helena
Chen, Zhihua
Facchetti, Antonio
Published in Journal of the American Chemical Society. 2009, vol. 131, no. 7, p. 2462-2463
Abstract Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) [PDIF-CN2] were fabricated by lamination of the semiconductor crystal on Si-SiO2/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum and in the air, and they exhibit electron mobilities of ca. 6−3 and ca. 3−1 cm2 V−1 s−1, respectively, Ion:Ioff > 103, and near-zero threshold voltage.
Identifiers
Full text
Article (Published version) (365 Kb) - document accessible for UNIGE members only Limited access to UNIGE
Other version: http://pubs.acs.org/doi/abs/10.1021/ja809848y
Structures
Citation
(ISO format)
MOLINARI, Anna S. et al. High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors. In: Journal of the American Chemical Society, 2009, vol. 131, n° 7, p. 2462-2463. https://archive-ouverte.unige.ch/unige:35117

171 hits

0 download

Update

Deposited on : 2014-03-31

Export document
Format :
Citation style :