Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) [PDIF-CN2] were fabricated by lamination of the semiconductor crystal on Si-SiO2/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum and in the air, and they exhibit electron mobilities of ca. 6−3 and ca. 3−1 cm2 V−1 s−1, respectively, Ion:Ioff > 103, and near-zero threshold voltage.