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Contact resistance in graphene-based devices

Russo, S.
Craciun, M.F.
Yamamoto, M.
Tarucha, S.
Published in Physica E: Low-dimensional Systems and Nanostructures. 2010, vol. 42, no. 4, p. 677-679
Abstract We report a systematic study of the total contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on many different graphene flakes we demonstrate that the contact resistance consists of a gate independent and a gate dependent part. We show that quantitatively the gate independent part of the contact resistance is the same for single-, bi-, and tri-layer graphene. We argue that this is the result of charge transfer from the metal, causing the Fermi level in the graphene region under the contacts to shift far away from the charge neutrality point.
Keywords GrapheneContact resistance
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Research group Groupe Morpurgo
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RUSSO, S. et al. Contact resistance in graphene-based devices. In: Physica E: Low-dimensional Systems and Nanostructures, 2010, vol. 42, n° 4, p. 677-679. doi: 10.1016/j.physe.2009.11.080 https://archive-ouverte.unige.ch/unige:35116

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Deposited on : 2014-03-31

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