Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

Naber, W.J.M.; Craciun, M.F.; Lemmens, J.H.J.; Arkenbout, A.H.; Palstra, T.T.M.; Morpurgo, Alberto; van der Wiel, W.G.

doi:10.1016/j.orgel.2010.01.013

Scientific article

Open access

English

Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

ContributorsNaber, W.J.M.; Craciun, M.F.; Lemmens, J.H.J.; Arkenbout, A.H.; Palstra, T.T.M.; Morpurgo, Alberto; van der Wiel, W.G.

Published inOrganic electronics, vol. 11, no. 5, p. 743-747

Publication date2010

Abstract

We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.

Keywords

Spintronics
Organic single-crystal
Field-effect transistor
Ferromagnetic electrodes

Affiliation

Research group

Groupe Morpurgo

Citation (ISO format)

NABER, W.J.M. et al. Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors. In: Organic electronics, 2010, vol. 11, n° 5, p. 743–747. doi: 10.1016/j.orgel.2010.01.013

Article (Published version)

Identifiers

PID : unige:35109
DOI : 10.1016/j.orgel.2010.01.013

Commercial URLhttp://linkinghub.elsevier.com/retrieve/pii/S1566119910000248

ISSN of the journal1566-1199

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Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

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