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Title

Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

Authors
Naber, W.J.M.
Craciun, M.F.
Lemmens, J.H.J.
Arkenbout, A.H.
Palstra, T.T.M.
van der Wiel, W.G.
Published in Organic Electronics. 2010, vol. 11, no. 5, p. 743-747
Abstract We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.
Keywords SpintronicsOrganic single-crystalField-effect transistorFerromagnetic electrodes
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NABER, W.J.M. et al. Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors. In: Organic Electronics, 2010, vol. 11, n° 5, p. 743-747. https://archive-ouverte.unige.ch/unige:35109

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Deposited on : 2014-03-31

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