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Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

Published inOrganic electronics, vol. 11, no. 5, p. 743-747
Publication date2010
Abstract

We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.

Keywords
  • Spintronics
  • Organic single-crystal
  • Field-effect transistor
  • Ferromagnetic electrodes
Research group
Citation (ISO format)
NABER, W.J.M. et al. Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors. In: Organic electronics, 2010, vol. 11, n° 5, p. 743–747. doi: 10.1016/j.orgel.2010.01.013
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ISSN of the journal1566-1199
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