Scientific article
Open access

Shot noise measurements in graphene

Published inSolid state communications, vol. 149, no. 27-28, p. 1050-1055
Publication date2009

We have investigated shot noise at microwave frequencies in wide-aspect-ratio graphene sheets in the temperature range of 4.2_30 K. We find that for our short .L < 300 nm/ graphene samples with width over length ratio W=L > 3, the Fano factor F reaches a maximum F _ 1=3 at the Dirac point and that it decreases substantially with increasing charge density. Our results agree with the theoretical prediction that electrical transport at the Dirac point is governed by evanescent electronic states.

  • Nanostructures
  • Electronic transport
  • Noise
Research group
Citation (ISO format)
DANNEAU, R. et al. Shot noise measurements in graphene. In: Solid state communications, 2009, vol. 149, n° 27-28, p. 1050–1055. doi: 10.1016/j.ssc.2009.02.046
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Article (Published version)
ISSN of the journal0038-1098

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