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Shot noise measurements in graphene

Danneau, R.
Wu, F.
Craciun, M.F.
Russo, S.
Tomi, M.Y.
Salmilehto, J.
Hakonen, P.J.
Published in Solid state communications. 2009, vol. 149, no. 27-28, p. 1050-1055
Abstract We have investigated shot noise at microwave frequencies in wide-aspect-ratio graphene sheets in the temperature range of 4.2_30 K. We find that for our short .L < 300 nm/ graphene samples with width over length ratio W=L > 3, the Fano factor F reaches a maximum F _ 1=3 at the Dirac point and that it decreases substantially with increasing charge density. Our results agree with the theoretical prediction that electrical transport at the Dirac point is governed by evanescent electronic states.
Keywords NanostructuresElectronic transportNoise
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Research group Groupe Morpurgo
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DANNEAU, R. et al. Shot noise measurements in graphene. In: Solid state communications, 2009, vol. 149, n° 27-28, p. 1050-1055. doi: 10.1016/j.ssc.2009.02.046 https://archive-ouverte.unige.ch/unige:35107

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Deposited on : 2014-03-31

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