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Scientific article
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High-performance n-type organic field-effect transistors with ionic liquid gates

Published inApplied physics letters, vol. 97, no. 14, 143307
Publication date2010
Abstract

High-performance n-type organic field-effect transistors were developed with ionic-liquid gates and N,N′′-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with negligible gate threshold voltage and mobility values as high as 5.0 cm2/V s. These mobility values are essentially identical to those measured in the same devices without the ionic liquid, using vacuum or air as the gate dielectric. Our results indicate that the ionic-liquid and n-type organic semiconductor interfaces are suitable to realize high-quality n-type organic transistors operating at small gate voltage, without sacrificing electron mobility.

Keywords
  • Organic semiconductors
  • Single crystals
  • Transistors
  • Carrier mobility
  • Dielectrics
  • Double layers
  • Capacitance
  • Dielectric devices
  • Electron mobility
  • Electric measurements
Research group
Citation (ISO format)
ONO, Shimpei et al. High-performance n-type organic field-effect transistors with ionic liquid gates. In: Applied physics letters, 2010, vol. 97, n° 14, p. 143307. doi: 10.1063/1.3493190
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Article (Published version)
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ISSN of the journal0003-6951
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