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High-performance n-type organic field-effect transistors with ionic liquid gates

Chen, Z.
Facchetti, A.
Published in Applied Physics Letters. 2010, vol. 97, no. 14, 143307
Abstract High-performance n-type organic field-effect transistors were developed with ionic-liquid gates and N,N′′-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with negligible gate threshold voltage and mobility values as high as 5.0 cm2/V s. These mobility values are essentially identical to those measured in the same devices without the ionic liquid, using vacuum or air as the gate dielectric. Our results indicate that the ionic-liquid and n-type organic semiconductor interfaces are suitable to realize high-quality n-type organic transistors operating at small gate voltage, without sacrificing electron mobility.
Keywords Organic semiconductorsSingle crystalsTransistorsCarrier mobilityDielectricsDouble layersCapacitanceDielectric devicesElectron mobilityElectric measurements
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Research group Groupe Morpurgo
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ONO, Shimpei et al. High-performance n-type organic field-effect transistors with ionic liquid gates. In: Applied Physics Letters, 2010, vol. 97, n° 14, p. 143307. doi: 10.1063/1.3493190 https://archive-ouverte.unige.ch/unige:35104

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Deposited on : 2014-03-31

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