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Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

Authors
Berger, Helmuth
Published in Nano Letters. 2012, vol. 12, no. 10, p. 5218-5223
Abstract We realized ambipolar field-effect transistors bycoupling exfoliated thin flakes of tungsten disulfide (WS2) with an ionic liquid dielectric. The devices show ideal electrical characteristics, including very steep subthreshold slopes for both electrons and holes and extremely low OFF-state currents. Thanks to these ideal characteristics, we determine with high precision the size of the band gap of WS2 directly from the gate-voltage dependence of the sourcedrain current. Our results demonstrate how a careful use of ionic liquid dielectrics offers a powerful strategy to study quantitatively the electronic properties of nanoscale materials
Keywords Ionic liquid-gated transistorsAmbipolar FETsTransition metal dichalcogenidesExfoliated crystals
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Other version: http://pubs.acs.org/doi/abs/10.1021/nl302389d
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BRAGA, Danièle et al. Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors. In: Nano Letters, 2012, vol. 12, n° 10, p. 5218-5223. https://archive-ouverte.unige.ch/unige:34974

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Deposited on : 2014-03-25

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