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Very low bias stress in n-type organic single-crystal transistors

Barra, M.
Di Girolamo, F. V.
Chen, Z.
Facchetti, A.
Cassinese, A.
Published in Applied Physics Letters. 2012, vol. 100, no. 13, p. 133301
Abstract Bias stress effects in n-channel organic field-effect transistors(OFETs) are investigated using N,N′-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s (PDIF-CN2) single-crystaldevices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ~1% under vacuum and ~10% in air. This remarkable stability of the devices leads to characteristic time constants τ, extracted by fitting the data with a stretched exponential—that are τ ~ 2 × 109 s in air and τ ~5 × 109 s in vacuum—approximately two orders of magnitude larger than the best values reported previously for p-channel OFETs.
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BARRA, M. et al. Very low bias stress in n-type organic single-crystal transistors. In: Applied Physics Letters, 2012, vol. 100, n° 13, p. 133301. https://archive-ouverte.unige.ch/unige:34973

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Deposited on : 2014-03-25

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