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Accessing the transport properties of graphene and its multilayers at high carrier density

Authors
Ye, J. T.
Craciun, M. F.
Koshino, M.
Russo, S.
Inoue, S.
Yuan, H. T.
Shimotani, H.
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Published in Proceedings of the National Academy of Sciences. 2011, vol. 108, no. 32, p. 13002-13006
Abstract We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 1014 cm-2. Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.
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YE, J. T. et al. Accessing the transport properties of graphene and its multilayers at high carrier density. In: Proceedings of the National Academy of Sciences, 2011, vol. 108, n° 32, p. 13002-13006. https://archive-ouverte.unige.ch/unige:34966

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Deposited on : 2014-03-25

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