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A ballistic pn junction in suspended graphene with split bottom gates

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Published in Applied Physics Letters. 2013, vol. 102, no. 22, p. 223102
Abstract We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene monolayer nearly 2 lm long. Measurements as a function of gate voltage, magnetic field, bias, and temperature exhibit characteristic Fabry-Perot oscillations in the cavities formed by the pn junction and each of the contacts, with transport occurring in ballistic regime. Our results demonstrate the possibility to achieve a high degree of control on the local electronic properties of ultra-clean suspended graphene layers, a key aspect for the realization of high quality grapheme nanostructures.
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GRUSHINA, Anna, KI, Dongkeun, MORPURGO, Alberto. A ballistic pn junction in suspended graphene with split bottom gates. In: Applied Physics Letters, 2013, vol. 102, n° 22, p. 223102. https://archive-ouverte.unige.ch/unige:34921

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Deposited on : 2014-03-24

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