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Title

Low and high temperature uniaxial stress devices for the study of ferroelastic crystals

Authors
Burkhardt, Ernest
Ye, Zuo.-Guang
Published in Review of Scientific Instruments. 1995, vol. 66, no. 7, p. 3888-3893
Abstract Detailed techniques for the construction of low (4-300 K) and high (300-700 K) temperature unaxial stress application devices are described, designed for studying stress-induced effects, including ferroelastic (/ferroelectric) detwinning, induced phase transitions, piezo-optical effects in ferroic crystals under in situ optical control of their domain states by means of polarized light microscopy. Examples of the successful application of these systems to YBa2Cu3O7-δ, K3Fe5F15, and Cr3B7O13Cl crystals are presented and discussed.
Keywords Stress (app. low and high temp. uniaxial stress devices for the study of ferroelec. crystals)Ferroelectric substances (low and high temp. uniaxial stress devices for the study of ferroelec. crystals)
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Other version: http://link.aip.org/link/RSINAK/v66/i7/p3888/s1
Structures
Project FNS: 1994
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BURKHARDT, Ernest, YE, Zuo.-Guang, SCHMID, Hans. Low and high temperature uniaxial stress devices for the study of ferroelastic crystals. In: Review of Scientific Instruments, 1995, vol. 66, n° 7, p. 3888-3893. https://archive-ouverte.unige.ch/unige:31074

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Deposited on : 2013-11-15

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