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Scientific article
English

Low and high temperature uniaxial stress devices for the study of ferroelastic crystals

Published inReview of scientific instruments, vol. 66, no. 7, p. 3888-3893
Publication date1995
Abstract

Detailed techniques for the construction of low (4-300 K) and high (300-700 K) temperature unaxial stress application devices are described, designed for studying stress-induced effects, including ferroelastic (/ferroelectric) detwinning, induced phase transitions, piezo-optical effects in ferroic crystals under in situ optical control of their domain states by means of polarized light microscopy. Examples of the successful application of these systems to YBa2Cu3O7-δ, K3Fe5F15, and Cr3B7O13Cl crystals are presented and discussed.

Keywords
  • Stress (app. low and high temp. uniaxial stress devices for the study of ferroelec. crystals)
  • Ferroelectric substances (low and high temp. uniaxial stress devices for the study of ferroelec. crystals)
Funding
  • Swiss National Science Foundation - 1994
Citation (ISO format)
BURKHARDT, Ernest, YE, Zuo.-Guang, SCHMID, Hans. Low and high temperature uniaxial stress devices for the study of ferroelastic crystals. In: Review of scientific instruments, 1995, vol. 66, n° 7, p. 3888–3893. doi: 10.1063/1.1145389
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Article (Published version)
accessLevelRestricted
Identifiers
ISSN of the journal0034-6748
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