High-temperature ferroelectric domain stability in epitaxial PbZr0.2Ti0.8O3 thin films

Paruch, Patrycja; Triscone, Jean-Marc

doi:10.1063/1.2196482

Scientific article

English

High-temperature ferroelectric domain stability in epitaxial PbZr_0.2Ti_0.8O₃ thin films

ContributorsParuch, Patrycja; Triscone, Jean-Marc

Published inApplied physics letters, vol. 88, no. 16, 162907

Publication date2006

Affiliation entities

Faculté des sciences / Section de physique / Département de physique de la matière quantique

Research groups

Citation (ISO format)

PARUCH, Patrycja, TRISCONE, Jean-Marc. High-temperature ferroelectric domain stability in epitaxial PbZr_0.2Ti_0.8O₃ thin films. In: Applied physics letters, 2006, vol. 88, n° 16, p. 162907. doi: 10.1063/1.2196482

Article (Published version)

Identifiers

PID : unige:31050
DOI : 10.1063/1.2196482

Journal ISSN0003-6951

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High-temperature ferroelectric domain stability in epitaxial PbZr0.2Ti0.8O3 thin films

Technical informations

High-temperature ferroelectric domain stability in epitaxial PbZr_0.2Ti_0.8O₃ thin films