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Scientific article
Open access
English

Reconstructions and phase transitions at semiconductor surfaces: Ge(111)

Published inSurface science, vol. 331-333, no. 2, p. 995-1001
Publication date1995
Abstract

First principles molecular dynamics studies of the low, intermediate, and high temperature phases of Ge(111) are reviewed. The atomic structure and electronic properties of the c(2 × 8) reconstruction, the diffusion of Ge adatoms at the c(2 × 8) → (1 × 1) disordering transition at T 300°C, and the behavior of Ge(111) close to the bulk melting temperature are discussed.

Keywords
  • Density functional calculations
  • Surface melting
  • Germanium
  • Low index single crystal surfaces
  • Molecular dynamics
  • Surface diffusion
Research group
Citation (ISO format)
SELLONI, Annabella, TAKEUCHI, Noboru, TOSATTI, Erio. Reconstructions and phase transitions at semiconductor surfaces: Ge(111). In: Surface science, 1995, vol. 331-333, n° 2, p. 995–1001. doi: 10.1016/0039-6028(95)00102-6
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Article (Published version)
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Identifiers
ISSN of the journal0039-6028
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