Article (Published version) - 
Free accessOther version: http://www.sciencedirect.com/science/article/pii/0039602895001026
Highlights
Scientific Article
unige:2989 
 |
Reconstructions and phase transitions at semiconductor surfaces: Ge(111) |
|
| Authors | ||
| Published in | Surface Science. 1995, vol. 331-333, no. 2, p. 995-1001 | |
| Abstract | First principles molecular dynamics studies of the low, intermediate, and high temperature phases of Ge(111) are reviewed. The atomic structure and electronic properties of the c(2 × 8) reconstruction, the diffusion of Ge adatoms at the c(2 × 8) → (1 × 1) disordering transition at T 300°C, and the behavior of Ge(111) close to the bulk melting temperature are discussed. | |
| Keywords | Density functional calculations — Surface melting — Germanium — Low index single crystal surfaces — Molecular dynamics — Surface diffusion | |
| Identifiers | ||
| Full text |
Article (Published version) - Free access Other version: http://www.sciencedirect.com/science/article/pii/0039602895001026 |
|
| Structures | ||
| Research group | Groupe Weber | |
| Citation (ISO format) | SELLONI, Annabella, TAKEUCHI, Noboru, TOSATTI, Erio. Reconstructions and phase transitions at semiconductor surfaces: Ge(111). In: Surface Science, 1995, vol. 331-333, n° 2, p. 995-1001. doi: 10.1016/0039-6028(95)00102-6 https://archive-ouverte.unige.ch/unige:2989 |
418 hits 
263 downloads 
Contact an author
Update