Reconstructions and phase transitions at semiconductor surfaces: Ge(111)

Selloni, Annabella; Takeuchi, Noboru; Tosatti, Erio

doi:10.1016/0039-6028(95)00102-6

Scientific article

English

Reconstructions and phase transitions at semiconductor surfaces: Ge(111)

ContributorsSelloni, Annabella; Takeuchi, Noboru; Tosatti, Erio

Published inSurface science, vol. 331-333, no. 2, p. 995-1001

Publication date1995

Abstract

First principles molecular dynamics studies of the low, intermediate, and high temperature phases of Ge(111) are reviewed. The atomic structure and electronic properties of the c(2 × 8) reconstruction, the diffusion of Ge adatoms at the c(2 × 8) → (1 × 1) disordering transition at T 300°C, and the behavior of Ge(111) close to the bulk melting temperature are discussed.

Keywords

Density functional calculations
Surface melting
Germanium
Low index single crystal surfaces
Molecular dynamics
Surface diffusion

Affiliation entities

Faculté des sciences / Section de chimie et biochimie / Département de chimie physique

Research groups

Groupe Weber

Citation (ISO format)

SELLONI, Annabella, TAKEUCHI, Noboru, TOSATTI, Erio. Reconstructions and phase transitions at semiconductor surfaces: Ge(111). In: Surface science, 1995, vol. 331-333, n° 2, p. 995–1001. doi: 10.1016/0039-6028(95)00102-6

Article (Published version)

Identifiers

PID : unige:2989
DOI : 10.1016/0039-6028(95)00102-6

Additional URL for this publicationhttp://www.sciencedirect.com/science/article/pii/0039602895001026

Journal ISSN0039-6028

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Reconstructions and phase transitions at semiconductor surfaces: Ge(111)

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