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Title

Reconstructions and phase transitions at semiconductor surfaces: Ge(111)

Authors
Takeuchi, Noboru
Tosatti, Erio
Published in Surface Science. 1995, vol. 331-333, no. 2, p. 995-1001
Abstract First principles molecular dynamics studies of the low, intermediate, and high temperature phases of Ge(111) are reviewed. The atomic structure and electronic properties of the c(2 × 8) reconstruction, the diffusion of Ge adatoms at the c(2 × 8) → (1 × 1) disordering transition at T 300°C, and the behavior of Ge(111) close to the bulk melting temperature are discussed.
Keywords Density functional calculationsSurface meltingGermaniumLow index single crystal surfacesMolecular dynamicsSurface diffusion
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Research group Groupe Weber
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SELLONI, Annabella, TAKEUCHI, Noboru, TOSATTI, Erio. Reconstructions and phase transitions at semiconductor surfaces: Ge(111). In: Surface Science, 1995, vol. 331-333, n° 2, p. 995-1001. https://archive-ouverte.unige.ch/unige:2989

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Deposited on : 2009-09-21

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