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Limited access to UNIGEOther version: http://prola.aps.org/pdf/PRB/v45/i23/p13378_1
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unige:2919 
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Structure, electronic properties and defects of amorphous gallium arsenide |
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| Published in | Physical Review. B, Condensed Matter. 1992, vol. 45, no. 23, p. 13378-13382 | |
| Abstract | We have constructed a structural model of amorphous gallium arsenide by quenching from the melt, via first-principles molecular-dynamics simulations. The properties of our structure agree well with the available experimental information. We find that the predominant defects in this system are not wrong bonds, but threefold-coordinated atoms. Because of a relaxation mechanism similar to that occurring on the GaAs(110) surface, these do not yield states in the gap, but yield empty Ga and filled As dangling-bond states near the band edges. | |
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Article (Published version) (464 Kb) - Limited access to UNIGE Other version: http://prola.aps.org/pdf/PRB/v45/i23/p13378_1 |
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| Structures | ||
| Research group | Groupe Weber | |
| Citation (ISO format) | FOIS, E. et al. Structure, electronic properties and defects of amorphous gallium arsenide. In: Physical Review. B, Condensed Matter, 1992, vol. 45, n° 23, p. 13378-13382. https://archive-ouverte.unige.ch/unige:2919 |
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