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Structure, electronic properties and defects of amorphous gallium arsenide

Authors
Fois, E.
Pastore, G.
Zhang, Q.M.
Published in Physical Review. B, Condensed Matter. 1992, vol. 45, no. 23, p. 13378-13382
Abstract We have constructed a structural model of amorphous gallium arsenide by quenching from the melt, via first-principles molecular-dynamics simulations. The properties of our structure agree well with the available experimental information. We find that the predominant defects in this system are not wrong bonds, but threefold-coordinated atoms. Because of a relaxation mechanism similar to that occurring on the GaAs(110) surface, these do not yield states in the gap, but yield empty Ga and filled As dangling-bond states near the band edges.
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Other version: http://prola.aps.org/pdf/PRB/v45/i23/p13378_1
Structures
Research group Groupe Weber
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FOIS, E. et al. Structure, electronic properties and defects of amorphous gallium arsenide. In: Physical Review. B, Condensed Matter, 1992, vol. 45, n° 23, p. 13378-13382. https://archive-ouverte.unige.ch/unige:2919

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Deposited on : 2009-09-21

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