UNIGE document Scientific Article
previous document  unige:2919  next document
add to browser collection

Structure, electronic properties and defects of amorphous gallium arsenide

Fois, E.
Pastore, G.
Zhang, Q.M.
Published in Physical Review. B, Condensed Matter. 1992, vol. 45, no. 23, p. 13378-13382
Abstract We have constructed a structural model of amorphous gallium arsenide by quenching from the melt, via first-principles molecular-dynamics simulations. The properties of our structure agree well with the available experimental information. We find that the predominant defects in this system are not wrong bonds, but threefold-coordinated atoms. Because of a relaxation mechanism similar to that occurring on the GaAs(110) surface, these do not yield states in the gap, but yield empty Ga and filled As dangling-bond states near the band edges.
Full text
Article (Published version) (464 Kb) - document accessible for UNIGE members only Limited access to UNIGE
Other version: http://prola.aps.org/pdf/PRB/v45/i23/p13378_1
Research group Groupe Weber
(ISO format)
FOIS, E. et al. Structure, electronic properties and defects of amorphous gallium arsenide. In: Physical Review. B, Condensed Matter, 1992, vol. 45, n° 23, p. 13378-13382. doi: 10.1103/PhysRevB.45.13378 https://archive-ouverte.unige.ch/unige:2919

411 hits

0 download


Deposited on : 2009-09-21

Export document
Format :
Citation style :