• Home
  1. Home
  2. Structure, electronic properties and defects of amorphous gallium arsenide
Scientific article
English

Structure, electronic properties and defects of amorphous gallium arsenide

Contributors

Fois, E.; Selloni, Annabella; Pastore, G.; Zhang, Q.M.; Car, Roberto

Published in

Physical review. B, Condensed matter and materials physics, vol. 45, no. 23, p. 13378-13382

Publication date

1992

Abstract

We have constructed a structural model of amorphous gallium arsenide by quenching from the melt, via first-principles molecular-dynamics simulations. The properties of our structure agree well with the available experimental information. We find that the predominant defects in this system are not wrong bonds, but threefold-coordinated atoms. Because of a relaxation mechanism similar to that occurring on the GaAs(110) surface, these do not yield states in the gap, but yield empty Ga and filled As dangling-bond states near the band edges.

UNIGE affiliation entities

UNIGE research groups

Citation (ISO format)

FOIS, E. et al. Structure, electronic properties and defects of amorphous gallium arsenide. In: Physical review. B, Condensed matter and materials physics, 1992, vol. 45, n° 23, p. 13378–13382. doi: 10.1103/PhysRevB.45.13378

Main files (1)

Article (Published version)

Identifiers

Additional URL for this publication

http://prola.aps.org/pdf/PRB/v45/i23/p13378_1

Journal ISSN

1098-0121
682views
0downloads

Technical informations

Creation

21/09/2009 16:09:46

First validation

21/09/2009 16:09:46

Update

14/03/2023 15:12:27

Status update

14/03/2023 15:12:27

Last indexation

29/10/2024 12:05:16
All rights reserved by Archive ouverte UNIGE and the University of Geneva
OpenAIRE Indexed & Validated