Scientific article
OA Policy
English

High-temperature spectral hole burning on Sm-doped single crystal materials of PbFCl family

Published in

Journal of luminescence, vol. 64, no. 1-6, p. 173-179

Publication date

1995

Abstract

Basic properties relevant to spectral hole burning (homogeneous and inhomogeneous spectral broadening, hole burning and filling mechanisms) are investigated in MeIyMeII1 − yFXIxXII1 − x: Sm2+ (Me = Ca,Sr,Ba; X = Cl,Br,I) single crystals. The relations between the spectral characteristics of 5D0,1-7F0 transitions and the material structure are described. Hole stability is investigated up to 430 K and is shown to be determined by ionic diffusion.

UNIGE research groups

Citation (ISO format)

JAANISO, Raivo, BILL, Hans. High-temperature spectral hole burning on Sm-doped single crystal materials of PbFCl family. In: Journal of luminescence, 1995, vol. 64, n° 1-6, p. 173–179. doi: 10.1016/0022-2313(95)00038-R

Main files (1)

Article (Published version)

Identifiers

Journal ISSN

0022-2313
730views
519downloads

Technical informations

Creation

21/09/2009 16:04:01

First validation

21/09/2009 16:04:01

Update

14/03/2023 15:12:13

Status update

14/03/2023 15:12:13

Last indexation

29/10/2024 12:03:35
All rights reserved by Archive ouverte UNIGE and the University of Geneva
OpenAIRE Indexed & Validated