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Schottky barrier heights at polar metal/semiconductor interfaces

Binggeli, N.
Baldereschi, A.
Published in Physical Review. B, Condensed Matter. 2003, vol. 68, no. 8, p. 085323
Abstract Using a first-principle pseudopotential approach, we have investigated the Schottky barrier heights of abrupt Al/Ge, Al/GaAs, Al/AlAs, and Al/ZnSe (100) junctions, and their dependence on the semiconductor chemical composition and surface termination. A model based on linear-response theory is developed, which provides a simple, yet accurate description of the barrier-height variations with the chemical composition of the semiconductor. The larger barrier values found for the anion-terminated surface than for the cation-terminated surface are explained in terms of the screened charge of the polar semiconductor surface and its image charge at the metal surface. Atomic-scale computations show how the classical image charge concept, valid for charges placed at large distances from the metal, extends to distances shorter than the decay length of the metal-induced-gap states.
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BERTHOD, Christophe, BINGGELI, N., BALDERESCHI, A. Schottky barrier heights at polar metal/semiconductor interfaces. In: Physical Review. B, Condensed Matter, 2003, vol. 68, n° 8, p. 085323. doi: 10.1103/PhysRevB.68.085323 https://archive-ouverte.unige.ch/unige:26783

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Deposited on : 2013-03-13

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