Scientific article

English

Temperature dependence of radiation damage annealing of Silicon Photomultipliers

ContributorsDe Angelis, Nicolas

; Kole, Merlin Reynaard

; Cadoux, Franck; Hulsman, Johannes

; Mianowski, S.; Rybka, D.; Stauffer, J.; Swakon, J.

Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, vol. 1048, 167934

Publication date2023-03

Affiliation entities

Faculté des sciences / Section de physique / Département de physique nucléaire et corpusculaire

Citation (ISO format)

DE ANGELIS, Nicolas et al. Temperature dependence of radiation damage annealing of Silicon Photomultipliers. In: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2023, vol. 1048, p. 167934. doi: 10.1016/j.nima.2022.167934

Article (Published version)

Identifiers

PID : unige:182870
DOI : 10.1016/j.nima.2022.167934

Additional URL for this publicationhttps://linkinghub.elsevier.com/retrieve/pii/S0168900222012268

Journal ISSN0168-9002

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Creation31/01/2025 12:58:51

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