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Pressure-tuned many-body phases through Γ-K valleytronics in moiré bilayer WSe2

Published in2D materials, vol. 12, no. 1, 015003
Publication date2025-01-01
First online date2024-10-14
Abstract

Recent experiments in twisted bilayer transition-metal dichalcogenides have revealed a variety of strongly correlated phenomena. To theoretically explore their origin, we combine here ab initio calculations with correlated model approaches to describe and study many-body effects in twisted bilayer WSe2 under pressure. We find that the interlayer distance is a key factor for the electronic structure, as it tunes the relative energetic positions between the K and the Γ valleys of the valence band maximum of the untwisted bilayer. As a result, applying uniaxial pressure to a twisted bilayer induces a charge-transfer from the K valley to the flat bands in the Γ valley. Upon Wannierizing moiré bands from both valleys, we establish the relevant tight-binding model parameters and calculate the effective interaction strengths using the constrained random phase approximation. With this, we approximate the interacting pressure-doping phase diagram of WSe2 moiré bilayers using self-consistent mean field theory. Our results establish twisted bilayer WSe2 as a platform that allows the direct pressure-tuning of different correlated phases, ranging from Mott insulators, charge-valley-transfer insulators to Kondo lattice-like systems.

Keywords
  • Moiré materials
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Citation (ISO format)
BRZEZIŃSKA, Marta et al. Pressure-tuned many-body phases through Γ-K valleytronics in moiré bilayer WSe2. In: 2D materials, 2025, vol. 12, n° 1, p. 015003. doi: 10.1088/2053-1583/ad7c5f
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Journal ISSN2053-1583
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