Resistive switching of VO<sub>2</sub> films grown on a thermal insulator

Rischau, Willem; Gariglio, Stefano; Triscone, Jean-Marc; del Valle, Javier

doi:10.1103/PhysRevApplied.22.014021

Scientific article

English

Resistive switching of VO₂ films grown on a thermal insulator

Contributors

Rischau, Willem

; Gariglio, Stefano

; Triscone, Jean-Marc; del Valle, Javier

Published in

Physical review applied, vol. 22, no. 1, 014021

Publication date

2024-07-10

First online date

2024-07-10

Abstract

Many correlated oxides feature an insulator-to-metal transition as the temperature is increased. In thin films, this transition can be electrically induced by localized Joule heating, resulting in volatile resistive switching. Considering the importance of thermal effects, the thermal conductivity of the underlying substrate is expected to play a key role. Despite this, its influence has not been experimentally explored. Here, we compare the resistive switching of VO₂ films grown on two substrates with very different thermal conductivities k: sapphire [k ∼ 50 W/(m K)] and mica [k ∼ 0.5 W/(m K)]. While the overall features of the electrical switching are similar, the VO₂−mica devices need around one order of magnitude less power to be switched, and their switching time is shorter. This can be understood by the improved thermal insulation offered by the substrate, which keeps the heat within the film. Our work shows that thermal insulators, such as mica, are a promising platform for energy-efficient volatile resistive switching.

UNIGE affiliation entities

Faculté des sciences / Section de physique / Département de physique de la matière quantique

UNIGE research groups

Groupe Triscone

Funding

U.S. Office of Naval Research - NICOP Grant [N62909-21-1-2028]
Swiss National Science Foundation - Correlated oxides for Neuromorphic Computing [185848]
Spanish Ministry of Science - Ramón y Cajal Fellowship [RYC2021-030952-I]
Asturias FICYT [AYUD/2021/51185]

Citation (ISO format)

RISCHAU, Willem et al. Resistive switching of VO₂ films grown on a thermal insulator. In: Physical review applied, 2024, vol. 22, n° 1, p. 014021. doi: 10.1103/PhysRevApplied.22.014021

Article (Published version)

Identifiers

PID : unige:178795
DOI : 10.1103/PhysRevApplied.22.014021

Additional URL for this publication

https://link.aps.org/doi/10.1103/PhysRevApplied.22.014021

Journal ISSN

2331-7019

200views

733downloads

Creation

11/07/2024 14:18:36

First validation

17/07/2024 13:52:40

Update

17/07/2024 13:52:40

Status update

17/07/2024 13:52:40

Last indexation

01/11/2024 10:21:07

Resistive switching of VO₂ films grown on a thermal insulator

Contributors

Published in

Publication date

First online date

Abstract

UNIGE affiliation entities

UNIGE research groups

Funding

Citation (ISO format)

Main files (1)

Identifiers

Additional URL for this publication

Journal ISSN

Technical informations

Creation

First validation

Update

Status update

Last indexation

Resistive switching of VO2 films grown on a thermal insulator

Contributors

Published in

Publication date

First online date

Abstract

UNIGE affiliation entities

UNIGE research groups

Funding

Citation (ISO format)

Main files (1)

Identifiers

Additional URL for this publication

Journal ISSN

Technical informations

Creation

First validation

Update

Status update

Last indexation

Resistive switching of VO₂ films grown on a thermal insulator