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Time resolution of a SiGe BiCMOS monolithic silicon pixel detector without internal gain layer with a femtosecond laser

Published inJournal of instrumentation, vol. 19, no. 04, p. P04029
Publication date2024-04-24
First online date2024-04-24
Abstract

Abstract

The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. At the highest frontend power density tested of 2.7 W/cm 2 , the time resolution with the femtosecond laser pulses was found to be 45 ps for signals generated by 1200 electrons, and 3 ps in the case of 11k electrons, which corresponds approximately to 0.4 and 3.5 times the most probable value of the charge generated by a minimum-ionizing particle. The results were compared with testbeam data taken with the same prototype to evaluate the time jitter produced by the fluctuations of the charge collection.

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Citation (ISO format)
MILANESIO, Matteo et al. Time resolution of a SiGe BiCMOS monolithic silicon pixel detector without internal gain layer with a femtosecond laser. In: Journal of instrumentation, 2024, vol. 19, n° 04, p. P04029. doi: 10.1088/1748-0221/19/04/P04029
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ISSN of the journal1748-0221
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Creation05/24/2024 12:23:35 PM
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