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Manganese silicide nanowires on Si(001)

Authors
Liu, H J
Miki, K
Published in Journal of Physics. Condensed Matter. 2011, vol. 23, no. 17, p. 172001
Abstract A method for promoting the growth of manganese silicide nanowires on Si(001) at 450 °C is described. The anisotropic surface stress generated by bismuth nanolines blocks the formation of embedded structures and stabilizes the nucleation of manganese silicide islands which grow in a preferred direction, forming nanowires with a band gap of approximately 0.6 eV, matching the reported band gap of MnSi1.7. This method may also provide a means to form silicide nanowires of other metals where they do not otherwise form.
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LIU, H J et al. Manganese silicide nanowires on Si(001). In: Journal of Physics. Condensed Matter, 2011, vol. 23, n° 17, p. 172001. https://archive-ouverte.unige.ch/unige:17264

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Deposited on : 2011-10-31

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