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Nanoscale domain engineering in SrRuO3 thin films

Published inAPL materials, vol. 11, no. 10, 101110
Publication date2023-10-01
First online date2023-10-11
Abstract

We investigate nanoscale domain engineering via epitaxial coupling in a set of SrRuO3/PbTiO3/SrRuO3 heterostructures epitaxially grown on (110)o-oriented DyScO3 substrates. The SrRuO3 layer thickness is kept at 55 unit cells, whereas the PbTiO3 layer is grown to thicknesses of 23, 45, and 90 unit cells. Through a combination of atomic force microscopy, x-ray diffraction, and high resolution scanning transmission electron microscopy studies, we find that above a certain critical thickness of the ferroelectric layer, the large structural distortions associated with the ferroelastic domains propagate through the top SrRuO3 layer, locally modifying the orientation of the orthorhombic SrRuO3 and creating a modulated structure that extends beyond the ferroelectric layer boundaries.

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Keywords
  • Phase transitions
  • Heterostructures
  • Strain measurement
  • Crystal lattices
  • Atomic force microscopy
  • Thin films
  • Transmission electron microscopy
  • X-ray diffraction
  • Magnetism
  • Ferroelectric materials
Citation (ISO format)
LICHTENSTEIGER, Céline et al. Nanoscale domain engineering in SrRuO<sub>3</sub> thin films. In: APL materials, 2023, vol. 11, n° 10, p. 101110. doi: 10.1063/5.0167553
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ISSN of the journal2166-532X
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Creation10/16/2023 6:51:30 AM
First validation10/18/2023 1:11:41 PM
Update time10/18/2023 1:11:41 PM
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