Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS<sub>4</sub> Transistors

Wu, Fan; Gibertini, Marco; Watanabe, Kenji; Taniguchi, Takashi; Gutierrez Lezama, Ignacio; Ubrig, Nicolas; Morpurgo, Alberto

doi:10.1021/acs.nanolett.3c02274

Scientific article

English

Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS₄ Transistors

ContributorsWu, Fan

; Gibertini, Marco

; Watanabe, Kenji

; Taniguchi, Takashi

; Gutierrez Lezama, Ignacio; Ubrig, Nicolas

; Morpurgo, Alberto

Published inNano letters, vol. 23, no. 17, p. 8140-8145

Publication date2023-08-23

First online date2023-08-23

Abstract

Keywords

2D magnetic semiconductor
CrPS4
Field effect transistor
Transport mechanism

Affiliation entities

Faculté des sciences / Section de physique / Département de physique de la matière quantique
Faculté des sciences / Section de physique / Groupe de physique appliquée

Research groups

Groupe Morpurgo

Citation (ISO format)

WU, Fan et al. Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS₄ Transistors. In: Nano letters, 2023, vol. 23, n° 17, p. 8140–8145. doi: 10.1021/acs.nanolett.3c02274

Article (Accepted version)

Identifiers

PID : unige:171739
DOI : 10.1021/acs.nanolett.3c02274
PMID : 37610296

Commercial URLhttps://pubs.acs.org/doi/10.1021/acs.nanolett.3c02274

ISSN of the journal1530-6984

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Creation27/09/2023 11:47:59

First validation27/09/2023 13:27:28

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Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS4 Transistors

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Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS₄ Transistors