Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS4 Transistors
Published inNano letters, vol. 23, no. 17, p. 8140-8145
Publication date2023-08-23
First online date2023-08-23
Abstract
Keywords
- 2D magnetic semiconductor
- CrPS4
- Field effect transistor
- Transport mechanism
Research group
Citation (ISO format)
WU, Fan et al. Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS<sub>4</sub> Transistors. In: Nano letters, 2023, vol. 23, n° 17, p. 8140–8145. doi: 10.1021/acs.nanolett.3c02274
Main files (1)
Article (Accepted version)
Secondary files (1)
Identifiers
- PID : unige:171739
- DOI : 10.1021/acs.nanolett.3c02274
- PMID : 37610296
Commercial URLhttps://pubs.acs.org/doi/10.1021/acs.nanolett.3c02274
ISSN of the journal1530-6984
