Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS<sub>4</sub>

Wu, Fan; Gibertini, Marco; Watanabe, Kenji; Taniguchi, Takashi; Gutierrez Lezama, Ignacio; Ubrig, Nicolas; Morpurgo, Alberto

doi:10.1002/adma.202211653

Scientific article

English

Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS₄

ContributorsWu, Fan

; Gibertini, Marco; Watanabe, Kenji; Taniguchi, Takashi; Gutierrez Lezama, Ignacio; Ubrig, Nicolas

; Morpurgo, Alberto

Published inAdvanced materials, 2211653

Publication date2023-04-25

First online date2023-04-25

Abstract

Keywords

2D magnetic semiconductor
CrPS4
Electrostatic controlled magnetism
Field effect transistor
Magnetotransport

Affiliation entities

Research groups

Groupe Morpurgo

Citation (ISO format)

WU, Fan et al. Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS₄. In: Advanced materials, 2023, p. 2211653. doi: 10.1002/adma.202211653

Article (Published version)

CC BY

Identifiers

PID : unige:168441
DOI : 10.1002/adma.202211653
PMID : 37098224

Additional URL for this publicationhttps://onlinelibrary.wiley.com/doi/10.1002/adma.202211653

Journal ISSN0935-9648

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Creation03/05/2023 10:02:39

First validation03/05/2023 12:14:41

Update time03/05/2023 12:14:41

Status update03/05/2023 12:14:41

Last indexation10/06/2025 21:50:40

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Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS4

Technical informations

Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS₄