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Scientific article
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English

Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe

Published inPhysical review letters, vol. 120, no. 15, 156403
Publication date2018-04-10
First online date2018-04-10
Abstract

The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in the presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust and isoelectronic and share the same structure with black phosphorus. We measure the band structure of SnSe and find highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown great promise.

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Keywords
  • Electronic structure
  • Semiconductors
  • Thermopower
  • Valleytronics
  • Phosphorene
  • Angle-resolved photoemission spectroscopy
Affiliation Not a UNIGE publication
Research group
Citation (ISO format)
PLETIKOSIĆ, I. et al. Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe. In: Physical review letters, 2018, vol. 120, n° 15, p. 156403. doi: 10.1103/PhysRevLett.120.156403
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ISSN of the journal0031-9007
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